Wireless Power Transfer System and Method

ABSTRACT

In accordance with an embodiment, a wireless power transmitter includes a charging surface, a transmitting antenna configured to generate an electromagnetic field extending above the charging surface, a sensing array disposed between the transmitting antenna and the charging surface, and a controller coupled to the sensing array. The sensing array includes a plurality of sensors. Each sensor of the plurality of sensors is configured to generate a respective signal indicative of a strength of the electromagnetic field. The controller is configured to detect a presence of a metallic object, other than a receiving antenna of a power receiver, in the electromagnetic field based on the respective signal generated by one or more sensors of the plurality of sensors.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.16/913,369, filed on Jun. 26, 2020, which is a divisional of U.S. patentapplication Ser. No. 16/141,703, filed on Sep. 25, 2018, which issued onJul. 14, 2020 as U.S. Pat. No. 10,714,985, which claims the benefit ofU.S. Provisional Application No. 62/570,883, filed on Oct. 11, 2017,which applications are hereby incorporated herein by reference.

TECHNICAL FIELD

The present invention relates generally to an electronic system andmethod, and, in particular embodiments, to a wireless charging system.

BACKGROUND

Wireless charging systems are becoming ubiquitous in today's society.For example, many smartphones and wearables implement wireless chargingtechnology. Ease of use, greater reliability, spatial freedom, reducedconnectors and openings, and the possibility of hermetically sealing areamong the benefits offered by wireless charging. Standards, such as Qistandard from the Wireless Power Consortium are becoming popular.

High power devices such as power tools, rugged notebook computers,medical instruments, factory automation systems, drones, and evenrobotic vacuums can benefit from the type of wireless charging seen ondevices such as wearables and smartphones. However, batteries in highpower devices have much greater capacities and require higher chargingrates in order to charge the device in a reasonable time. The chargingrate required by high power devices starts at 30 W, but may reach up to100 W or more.

There are many challenges in managing and providing high power levelsthrough a wireless interface, such as efficiency, metallic ForeignObject Detection (FOD) and Electromagnetic Interference (EMI). Many ofthese challenges are critical to a working and safe system. Physicsimposes limits on what can be accomplished using common circuittopologies and transmitter/receiver architectures, but the key is topick an implementation that provides sufficient efficiency and safeoperation at a reasonable overall cost.

SUMMARY

In accordance with an embodiment, a wireless power transmitter includesa charging surface, a transmitting antenna configured to generate anelectromagnetic field extending above the charging surface, a sensingarray disposed between the transmitting antenna and the chargingsurface, and a controller coupled to the sensing array. The sensingarray includes a plurality of sensors. Each sensor of the plurality ofsensors is configured to generate a respective signal indicative of astrength of the electromagnetic field. The controller is configured todetect a presence of a metallic object, other than a receiving antennaof a power receiver, in the electromagnetic field based on therespective signal generated by one or more sensors of the plurality ofsensors.

In accordance with an embodiment, a wireless power receiver includes areceiver surface, a receiving antenna configured to receive anelectromagnetic field extending through the receiver surface, a sensingarray disposed between the receiving antenna and the receiver surface,and a controller coupled to the sensing array. The sensing arrayincludes a plurality of sensors. Each sensor of the plurality of sensorsis configured to generate a respective signal indicative of a strengthof the electromagnetic field. The controller is controller configured togenerate a two-dimensional (2D) map of the strength of theelectromagnetic field based on the respective signal generated by one ormore sensors of the plurality of sensors, and transmit the 2D map to awireless power transmitter.

In accordance with an embodiment, a wireless power transmitter includesa transmitting antenna, a resonant capacitor coupled in series with thetransmitting antenna, an amplifier coupled to the transmitting antenna,a foreign object detection circuit, and a controller. The foreign objectdetection circuit includes a first voltage measurement circuit coupledacross terminals of the transmitting antenna, where the first voltagemeasurement circuit is configured to measure a first voltage, and asecond voltage measurement circuit coupled across terminals of theresonant capacitor, where the second voltage measurement circuit isconfigured to measure a second voltage. The controller is configured toreceive from a wireless power receiver an average receive power by thewireless power receiver, determine an average transmit power by thetransmitting antenna based on the first voltage and the second voltage,and determine whether a metallic object is present in an electromagneticfield generated by the transmitting antenna based on the averagetransmit power and the average receive power.

In accordance with an embodiment, a wireless power transmitter includesa transmitting antenna, a resonant capacitor coupled in series with thetransmitting antenna, a class-E amplifier, and a controller. The class-Eamplifier includes a switching transistor coupled between anintermediate node and a reference terminal, where the intermediate nodeis coupled to the transmitting antenna, an inductor coupled between asupply terminal and the intermediate node, and a capacitor tuning bankcoupled to the intermediate node. The controller is coupled to theswitching transistor and is configured to turn on and off the switchingtransistor at a switching frequency between 80 kHz and 400 kHz, when theswitching frequency is higher than a target frequency, increase acapacitance connected to the intermediate node by controlling thecapacitor tuning bank, and when the switching frequency is lower thanthe target frequency, decrease the capacitance connected to theintermediate node by controlling the capacitor tuning bank.

In accordance with an embodiment, a wireless power transmitter includesa transmitting antenna, a resonant capacitor coupled in series with thetransmitting antenna, a class-E amplifier, and a controller. The class-Eamplifier includes a first switching transistor coupled between a firstintermediate node and a reference terminal, where the first intermediatenode is coupled to the transmitting antenna, a second switchingtransistor coupled between a second intermediate node and the referenceterminal, where the second intermediate node coupled to the transmittingantenna, a first inductor coupled between a supply terminal and thefirst intermediate node, a second inductor coupled between the supplyterminal and the second intermediate node, a transformer having aprimary winding coupled between the first intermediate node and thesecond intermediate node and a secondary winding coupled to thetransmitting antenna, and a capacitor tuning bank coupled to the firstand second intermediate nodes. The controller is coupled to the firstand second switching transistors and is configured to turn on and offthe first and second switching transistors at a switching frequency.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIG. 1 shows a cross-sectional view of a wireless power system,according to an embodiment of the present invention;

FIG. 2 shows a top view of the power transmitter of the wireless powersystem of FIG. 1, according to an embodiment of the present invention;

FIGS. 3 and 4 show a top view and a cross-sectional view, respectively,of a sensor of the array of metallic object sensing structures of FIG.2, according to an embodiment of the present invention;

FIG. 5 shows a schematic diagram of a foreign object detection system,according to an embodiment of the present invention;

FIG. 6 shows a schematic diagram of a foreign object detection system,according to another embodiment of the present invention;

FIGS. 7A and 7B show flow charts of embodiment methods for detecting thepresence of metallic objects near a charging surface of the powertransmitter of FIG. 1, according to embodiments of the presentinvention;

FIG. 8 shows a power transmitter circuit having a conventional foreignobject detection circuit used to estimate the transmitted power;

FIG. 9 shows a power transmitter circuit having a foreign objectdetection circuit, according to an embodiment of the present invention;

FIG. 10 shows a schematic diagram of a class-E amplifier, according toan embodiment of the present invention;

FIGS. 11 and 12 show waveforms of the class-E amplifier of FIG. 10,according to embodiments of the present invention; and

FIG. 13 shows a schematic diagram of a class-E amplifier that uses atransformer, according to an embodiment of the present invention.

Corresponding numerals and symbols in different figures generally referto corresponding parts unless otherwise indicated. The figures are drawnto clearly illustrate the relevant aspects of the preferred embodimentsand are not necessarily drawn to scale. To more clearly illustratecertain embodiments, a letter indicating variations of the samestructure, material, or process step may follow a figure number.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments disclosed are discussed indetail below. It should be appreciated, however, that the presentinvention provides many applicable inventive concepts that can beembodied in a wide variety of specific contexts. The specificembodiments discussed are merely illustrative of specific ways to makeand use the invention, and do not limit the scope of the invention.

The description below illustrates the various specific details toprovide an in-depth understanding of several example embodimentsaccording to the description. The embodiments may be obtained withoutone or more of the specific details, or with other methods, components,materials and the like. In other cases, known structures, materials oroperations are not shown or described in detail so as not to obscure thedifferent aspects of the embodiments. References to “an embodiment” inthis description indicate that a particular configuration, structure orfeature described in relation to the embodiment is included in at leastone embodiment. Consequently, phrases such as “in one embodiment” thatmay appear at different points of the present description do notnecessarily refer exactly to the same embodiment. Furthermore, specificformations, structures or features may be combined in any appropriatemanner in one or more embodiments.

The present invention will be described with respect to embodiments in aspecific context, an inductive wireless charging system. Embodiments ofthe present invention may be used in other types of systems, such asresonant wireless charging systems, for example.

In an embodiment of the present invention, a sensing array that includesa plurality of sensing coils disposed between a transmitting antenna ofa wireless power transmitter and a wireless charging surface of thewireless power transmitter is used to detect the presence and locationof foreign metallic objects during wireless charging. A controllerdetects disruptions in the magnetic field by measuring the voltageacross each of the coils of the sensing array to generate atwo-dimensional (2D) magnetic field map. If a metallic object isdetected near the wireless charging surface, the controller may stopcharging, reduce the power transmitted via wireless charging, alert auser, or take any other action based on the detection of the presenceand location of the metallic object. In some embodiments the sensingarray is implemented in a power receiver, between an external surface ofthe power receiver and a receiving antenna.

In an embodiment, foreign metallic object detection is improved by usinga class-E amplifier and by computing the average transmitted power bymeasuring the instantaneous power of the transmitting antenna. Theinstantaneous voltage (AC voltage) across the transmitting antenna ismeasured by a voltage measurement circuit. The instantaneous current (ACcurrent) flowing through the transmitting antenna is measured bymeasuring the voltage across the resonant capacitor that is coupled inseries with the transmitting antenna using a voltage measurementcircuit.

In an embodiment, a wireless power transmitter exhibits improved EMIperformance by using a class-E amplifier to drive the transmittingantenna. Some embodiments use zero-voltage switching (ZVS) or quasi ZVS(QZVS) techniques by using a zero-crossing detector. Some embodimentsuse a capacitor tuning bank to adjust the resonance frequency of theclass-E amplifier to a desired value (such as for driving thetransmitting antenna at a fixed frequency). Some embodiments furtherimprove the EMI performance by using a transformer between the switchingtransistors of the class-E amplifier and the transmitting antenna. Insome embodiments, the class-E amplifier is operated at low frequencies,such as frequencies between 80 kHz and 400 kHz.

FIG. 1 shows a cross-sectional view of wireless power system 100,according to an embodiment of the present invention. Wireless powersystem 100 includes power transmitter 102 and power receiver 104. Powertransmitter 102 includes one or more transmitting antenna(s) 108 (threein this particular embodiment), shield 106, charging surface 114, andsensing array 110. Sensing array 110 includes a plurality of sensors112. Power receiver 104 includes one or more receiving antenna 116.

During normal operation, power transmitter 102 generates a magneticfield (not shown) by circulating a low frequency AC current throughtransmitting antennas 108. The magnetic field induces a correspondingcurrent in receiving antenna 116, which in turn provides power tocircuits (not shown) coupled to receiving antenna 116.

Wireless power system 100 may be implemented in consumer applications,such as for charging a smartphone, or tablet, wirelessly powering anexternal circuit, etc. Wireless power system 100 may also be used inautomotive applications, such as for charging devices inside a car, aswell as in industrial applications, such as for wirelessly providingpower to equipment and other devices.

Charging surface 114, which may also be referred to as an active powertransfer surface, is a surface in which an external circuit or system isplaced for wirelessly receiving power. Charging surface 114 should notbe construed as being used only for wirelessly charging a battery of theexternal circuit. For example, charging surface 114 may be used forwirelessly powering an external circuit without charging a battery ofsuch external circuit. In some embodiments, charging surface 114 is usedfor wirelessly charging an external circuit in addition to wirelesslypowering the external circuit.

A metallic object, such as metallic object 118, may be exposed to themagnetic field generated by power transmitter 102. Such metallic objectsmay be referred to as foreign metallic objects. The foreign metallicobjects may be classified as friendly (contained within power receiver104) or unfriendly (separate from power receiver 104).

Regardless of their classification, foreign metallic objects, such asferrous-based metals and alloys, may heat up in the presence of theelectromagnetic field generated by power transmitter 102, for example,due to eddy currents. For example, metallic objects with lighter thermalmass may heat up more than 100° C. when in the presence of a strongmagnetic field at low frequencies (e.g., between 80 kHz and 400 kHz).Heating up foreign metallic objects is generally undesirable because ofreduced efficiency of energy transfer, risk of damage to the powertransmitter 102 and power receiver 104, safety concerns, etc. It istherefore advantageous to detect the presence of foreign metallicobjects in the electromagnetic field, which allows wireless power system100 to take an action, such as stopping the energy transfer or reducingthe power transferred, in response of detecting the presence of foreignmetallic objects.

Power transmitter 102 uses sensing array 110 for foreign objectdetection. Sensing array 110 is disposed between transmitting antenna(s)108 and charging surface 114, and is thereby exposed to the magneticfield generated by antenna(s) 108. Sensing array 110 includes aplurality of sensors 112, such as coils, that are capable of detectingthe strength of the magnetic field. The presence of a foreign metallicobject (friendly or unfriendly) in the magnetic field causesdisturbances in the magnetic fields. Sensors 112 are capable ofdetecting such disturbances.

Sensing array 110 monitors the magnetic field and reports changes to acontroller of power transmitter 102 (not shown), which then determineson the appropriate action to take, if any.

In some embodiments, sensing array 110 is implemented in power receiver104 instead of in power transmitter 102. Power receiver 104 may capturethe strength and direction of the magnetic field in a 2D magnetic fieldmap and transmit the 2D magnetic field map to power transmitter 102using, for example, an existing communication interface. Power receiver104 may also send a reference 2D magnetic field map stored in a memoryof power receiver 104 that was captured (e.g., during a characterizationor production time) using a reference power transmitter without metallicobjects. Power transmitter may compare the measured 2D magnetic fieldmap with the reference 2D magnetic field map. Any differences betweenthe measured and reference 2D magnetic field map is indicative of thepresence of metallic objects in the electromagnetic field generated bypower transmitter 102.

In some embodiments, sensing array 110 is implemented in both powertransmitter 102 and power receiver 104.

Power transmitter 102 as shown in FIG. 1 includes three antennas 108.Some embodiments may have a single transmitting antenna. Otherembodiments may have two transmitting antennas, or more than threetransmitting antennas.

Power transmitter 102 may be implemented in various ways. For example,some embodiments implement power transmitter with power transmittercircuit 800, 900, 1000, 1300 (described below with respect to FIGS.8-13) or a combination thereof. Other implementations are also possible.

Transmitting antenna 108 may be implemented in any way known in the art.For example, in some embodiments, transmitting antenna 108 isimplemented with single-stranded wires. In other embodiments, antenna108 is implemented with multi-stranded wires. Other implementations arealso possible. For example, some embodiments implement antenna 108 in aprinted circuit board (PCB), a flexible printed circuit (FPC), or usingother electrically conductive materials.

Shield 106 is configured to shield sensors 112 (e.g., the back of thecoils) from a magnetic field. In some embodiments, shield 106 is alsoconfigured to increase the inductance of the coils of sensors 112, aswell as the coupling coefficient to receiving antenna 116. Shield 106may be implemented, for example, using a ferrite material. Othermagnetically active materials may be used.

As shown in FIG. 1, shield 106 is implemented as a single shield. Insome embodiments, shield 106 may be implemented as a plurality ofshields. For example, in some embodiments, each transmitting antenna 108is disposed on top of a respective shield 106.

Metallic objects 118 may include, for example, friendly foreign metallicobjects, such as the case of a smartphone or table, and unfriendlyforeign metallic objects, such as coins, fasteners, paper clips,aluminum foil, metallic keys or tools, metallic objects embedded in orattached to phone protective cases, etc.

FIG. 2 shows a top view of power transmitter 102, according to anembodiment of the present invention. Although in some embodimentsantenna(s) 108 may not be visible from in a top view (since antennas 108are beneath sensing array 110), antenna(s) 108 are shown in FIG. 2 forreference purposes. Charging surface 114 is not shown in FIG. 2 forclarity purposes.

As shown in FIG. 2, sensing array 110 includes a plurality of sensors112 arranged in rows and columns. In this embodiment, seven rows andseven columns equally spaced are shown. In some embodiments, a differentnumbers of rows and columns (e.g., six rows and five columns) may beused. In some embodiments, the spacing between each of the plurality ofsensors 112 may be different.

Each sensor 112 includes one or more coils. Each of the coils generatesa voltage that is related (e.g., proportional) to the strength of themagnetic field flowing through the core area (magnetic axis) of thecoil. By measuring the voltage across terminals of each of the coils, itis possible to generate a map of the magnetic field.

Each of sensors 112, as shown in FIG. 2, includes three coils; one foreach axis of a three-dimensional (3D) space (i.e., x-axis, y-axis, andz-axis). By using three coils per sensor 112, it is possible to detectthe strength and orientation in the 3D space of the magnetic fields.Some embodiments may be implemented with one or more of sensors 112implementing a single coil (e.g., for the z-axis), or two coils. In someembodiments, a Hall sensor may be used instead of or in addition to thecoils of sensor 112 to detect the strength of the magnetic field. Othermagnetically sensitive element may also be used.

Sensing array 110 may be implemented, for example, in a PCB. Forexample, in a PCB, the coils of each of sensors 112 may be implementedusing traces or a combination of traces and vias. FIGS. 3 and 4 show atop view and a cross-sectional view, respectively, of sensor 112,according to an embodiment of the present invention.

As shown in FIG. 3, coil 302 is capable of detecting the strength of themagnetic field in the x-axis, coil 304 is capable of detecting thestrength of the magnetic field in the y-axis, and coil 306 is capable ofdetecting the strength of the magnetic field in the z-axis. As shown inFIG. 4, coil 304 is implemented with a combination of traces 404 andvias 406 going through PCB 402. Coil 302 is implemented with traces 404(not shown) and vias 406. Coil 306 (not shown) is implemented withtraces 404. In some embodiments, coil 306 may be implemented usingpartial vias, thereby having turns in inner layers of PCB 402.

FIG. 5 shows a schematic diagram of foreign object detection system 500,according to an embodiment of the present invention. Foreign objectdetection system 500 includes differential amplifier 502,analog-to-digital converter (ADC) 504, and controller 506.

During normal operation, a voltage is generated across terminals of coil306 based on the strength of the magnetic field flowing through the corearea of coil 306. Such voltage is amplified by amplifier 502 and thenconverted into digital data by ADC 504. Controller 506 receives thedigital data from ADC 504 and determines if changes in the magneticfield have occurred. Controller 506 may take an action, such as turningoff power transmitter 102, reducing the amount of energy transmitted bypower transmitter 102, send data based on the digital data received topower receiver 104, or take any other action (including no action).

Even though foreign object detection system 500 is illustrated detectingthe strength of the magnetic field flowing through a single coil 306, itis understood that foreign object detection system 500 may also detectthe strength of the magnetic field flowing through a plurality of coils302, 304, and 306.

In some embodiments, an amplifier 502 and ADC 504 are used for each ofthe coils of the sensing array no. In some embodiments, one or more ADC504 and/or one or more amplifiers 504 may be used for a plurality ofcoils, by, for example, using one or more analog multiplexer. Forexample, FIG. 6 shows a schematic diagram of foreign object detectionsystem 600, according to an embodiment of the present invention. Foreignobject detection system 600 operates in a similar manner as foreignobject detection system 500. Foreign object detection system 600,however, includes analog multiplexers (AMUXs) 602 and 604 to shareamplifier 502 and ADC 504 with n coils of sensors 112, where n may be asubset of the total number of coils in sensing array 110 or all thecoils in sensing array 110.

Measuring the voltage across each of the coils by ADC 504 when sharedmay be performed in any way known in the art. For example, in someembodiments, such measurements may be performed in a round-robinconfiguration. Such sampling of all sensors 112 (e.g., 50 sensors 112,100 sensors 112, or more) may be performed in a few milliseconds or less(e.g., 10 ms). In some embodiments, a subset of the coils may be sampledin each round. Other implementations are also possible.

A controller, such as controller 506, may use the voltage across sensors112 to detect foreign metallic objects. For example, the presence of ametallic object in a magnetic field decreases the strength of themagnetic field flowing through the metallic object. The magnetic fieldaround such metallic object increases around the metallic object.Sensing array 110 may detect, for example, that a first sensor 112 (or agroup of clustered sensors 112) shows a low magnetic field (e.g., lowvoltage) versus the sensors 112 around such first sensor 112. Suchsignature is indicative that a metallic object is located on top of thefirst sensor 112.

Controller 506 may be implemented in any way known in the art. Forexample, some embodiments may implement controller 506 with a generalpurpose controller. Other embodiments may implement controller 506 usinga digital signal processor (DSP) or a field programmable gate array(FPGA). Yet other embodiments may implement controller 506 using customlogic, such as an application-specific integrated circuit (ASIC). Otherimplementations are also possible.

FIG. 7A shows a flow chart of embodiment method 700 for detecting thepresence of metallic objects near charging surface 114, according to anembodiment of the present invention. During step 702, sensing array nogenerates a 2D magnetic field map of the strength of the magnetic fieldsnear charging surface 114.

During step 704, the magnetic field detected by each sensor 112 iscompared with the magnetic fields detected by neighboring sensors 112.If the strength of the magnetic field of a first sensor 112 (or clusterof sensors 112) is lower than the surrounding magnetic fields by atleast a first threshold, a metallic object is detect near the firstsensor 112, as shown by step 706. If not, a metallic object is notdetected, as shown in step 710.

If a metallic object is detected, an action, such as informing a uservisually or audibly, stopping power transfer or reducing the amount ofpower transfer may be taken, as shown in step 708. In some embodiments,step 708 may involve taking no action.

As shown in FIG. 7A, monitoring may continue after steps 710 and 708.For example, in some embodiments, method 700 may be repeated every 100ms. Other refreshed periods, such as every 200 ms or slower, or every 90ms or faster may be used. In some embodiments, the refresh period may beconstant. In other embodiments, the refresh period may vary.

The 2D magnetic field map may be affected by factors other than thepresence of metallic objects. For example, the presence of powerreceiver 104 may cause an increase in the strength of the magnetic fieldnear receiving antenna 116 due to the presence of a ferrite material.Such interactions between the presence of power receiver 104 and thepresence of metallic objects near charging surface 114 may be consideredwhen determining if a metallic object is present near charging surface114. For example, such interactions may be characterized during acharacterization or production phase to model such interactions. Suchmodel may be used when determining if a metallic object is near chargingsurface 114.

In some embodiments, a method for detecting foreign objects may use the2D magnetic field map in conjunction with additional information todetermine the presence of metallic objects near charging surface 114.For example, in some embodiments, an array of temperature sensorsdisposed at or near charging surface 114 may be used to detect hotspots. Identifying such hot spots is advantageous because it improvesthe accuracy of detecting metallic objects near charging surface 114.

In some embodiments, correlations between disruptions in the magneticfield and in a 2D temperature map are used to detect the presence ofmetallic objects near charging surface 114. For example, a metallicobject may create a mild disruption in the magnetic field (e.g., becauseit is small). By itself, such disruption may not be enough to concludethat a metallic object is present near charging surface 114. However, ifthe same location is also experiencing high temperatures, a metallicobject is likely present where the magnetic field is being disrupted.

Some embodiments detect the magnetic field with sensors 112 by measuringthe voltage across terminals of the respective coils (such as describedwith respect to FIGS. 5 and 6). Other embodiments may determine thestrength of the magnetic field by detecting changes in thecharacteristics of the coil, such as the inductance or impedance of thecoil, for example. Some embodiments may detect the strength of themagnetic field by first exciting the coils of sensing array 110 to buildup a certain amount of energy in the coil, and then shorting the coiland measuring one or more of the parameters, such as peak amplitude,frequency of oscillation (e.g., resonant frequency), quality factor,damping factor, series resistance, etc. In some embodiment, the coils ofsensing array 110 are energized with a pulse. Other embodiments energizethe coils of sensing array 110 with a periodic signal. Other methods forenergizing the coils of sensing array 110 may be used.

Advantages of some embodiments include the detection of the presence andlocation of metallic objects near the charging surface of a powertransmitter by using a sensing array that includes a plurality of coils.Using a sensing array that includes a plurality of coils between thetransmitting antenna(s) and the charging surface has the additionaladvantage of blocking the electric field, resulting in betterelectromagnetic interference (EMI) performance.

Detecting metallic objects in the electromagnetic field generated by apower transmitter may be achieved in other ways. For example, aconventional wireless charging system may detect whether a metallicobject is in the electromagnetic field generated by the powertransmitter by estimating the transmitted power by the powertransmitter, estimating the received power by a power receiver,computing the lost power by subtracting the estimated received powerfrom the transmitting power, and comparing the lost power to athreshold. If the lost power is higher than a threshold, a metallicobject is likely present in the electromagnetic field generated by thepower transmitter.

In some embodiments, it may be desirable to detect metallic objectsbefore starting to transmit power from power transmitter 102. FIG. 7Bshows a flow chart of embodiment method 750 for detecting the presenceof metallic objects near charging surface 114 before starting totransmit power from power transmitter 102, according to an embodiment ofthe present invention. Method 750 is similar to method 700. Duringmethod 750, however, power transmitter 102 is not actively transmittingpower. To generate a magnetic field that can be captured during step702, power transmitter 102 generates a pulse of electromagnetic energy(e.g., during 1 ms). After the pulse, step 702 may be executed in asimilar manner as described in method 700.

In some embodiments, the coils in sensors 112 may be pulsed instead ofpower transmitter 102 generating the pulse of electromagnetic energyduring step 752.

If a metallic object is detected during method 750, actions such as notstarting to charge until the metallic object is removed, and notifying auser that a metallic object is present may be performed during step 758.

Controller 506 may use sensing array no to detect the location of powerreceiver 104. Such location may be used by power transmitter 102 toactivate or use transmitting antenna 108 that is better located (e.g.,nearest) for transmitting power to power transmitter 108. For example,the presence of power receiver 104 may cause an increase in the strengthof the magnetic field near receiving antenna 116 due to the presence ofa ferrite material. The 2D magnetic field map, therefore, may beprocessed to identify the location of power receiver 104 by analyzingthe changes in the strength and direction of the magnetic field based onthe 2D magnetic field map.

Power transmitter 102 may also use the location of power receiver 104 toprovide feedback, such as audio, visual, and haptic feedback to a userto aid with the positioning of power receiver 104 in charging surface114.

Determining the location of power receiver 104 is advantageous forvarious reasons. For example, the location of power receiver 104 may aidin increasing the accuracy of detecting metallic objects in theelectromagnetic field generated by power transmitter 102 since thepresence of power receiver 104 at a particular location may help explainsome of the disruptions in the 2D magnetic field map.

Additional advantages include the amount of power transmitted by aparticular transmitting antenna 108 may be increased or decreased basedon knowledge of the location of power receiver 104. For example, ifpower receiver 104 is near a first transmitting antenna (e.g., 108 ₂)and far from a second transmitting antenna (e.g., 108 ₃), controller 506may increase the power transmitted by the first transmitting antenna(e.g., 108 ₂) and decrease the power transmitted by the secondtransmitting antenna (e.g., 108 ₃). In some embodiments, controller 506may switch the active antenna from the second transmitting antenna(e.g., 108 ₃) to the first transmitting antenna (e.g., 108 ₂).

FIG. 8 shows power transmitter circuit 800 having conventional foreignobject detection circuit 809 used to estimate the transmitted power.Power transmitter circuit 800 includes class-D amplifier 802, EMI filter806, and resonant capacitor 804 for driving transmitting antenna 108.Foreign object detection circuit 809 includes sense resistor 812, andADCs 814, 816, and 824.

During normal operation, class-D amplifier 802 drives antenna 108 withan alternating current (AC) to generate an electromagnetic field fortransmitting power. Foreign object detection circuit 809 estimates thetransmitted power by measuring the input DC current during step 820,measuring the input DC voltage during step 818 and calculating the inputDC power during step 822. The RMS current flowing through transmittingantenna 108 is estimated in step 826 by measuring peak voltages with apeak detector using ADC 824. The estimated transmitted power is computedby subtracting from the input DC power the estimated losses in class-Damplifier 802, filter 806 and transmitting antenna 108 based on themeasured RMS current.

EMI filter 806 is used to reduce EMI generated by class-D amplifier 802.For example, inductors (or ferrite beads—also known as ferrite chokes)808 and 810 attenuate high-order harmonics generated by the outputs ofclass-D amplifier 802.

Estimating losses in power transmitter circuit 800 to estimate thetransmitted power may be affected by the use of EMI filteringcomponents, such as filter 806, and the dynamic variations of thecharacteristics of circuits such as class-D amplifier 802. For example,the conduction and switching losses in class-D amplifier 802 (e.g., inthe bridge FETs) may not be easily predictable and the losses in the EMIfiltering components depend on the harmonic content of the currentflowing through transmitting antenna 108 and the voltage waveformsgenerated by class-D amplifier 802. Temperature variations also affectthe accuracy of the estimates of losses in power transmitter circuit800.

In some embodiments, better EMI performance is achieved while achievinghigher accuracy in estimating the transmitted power when compared toconventional systems and methods by using a class-E amplifier and bymeasuring the instantaneous current flowing through the transmittingantenna and the voltage across the transmitting antenna. In someembodiments, the instantaneous AC current flowing through thetransmitting antenna is measured by measuring the voltage acrossthermally stable components, such as the resonant capacitor. In someembodiments, a class-D amplifier, for example, may be used instead of aclass-E amplifier.

FIG. 9 shows power transmitter circuit 900 having foreign objectdetection circuit 909, according to an embodiment of the presentinvention. Power transmitter circuit 900 includes amplifier 902, EMIfilter 906, and resonant capacitor 904 for driving transmitting antenna108. Foreign object detection circuit 909 includes ADCs 912 and 916.

During normal operation, amplifier 902 drives antenna 108 with an ACcurrent to generate an electromagnetic field for transmitting power.Class-E amplifiers advantageously generate less EMI than a comparableclass-D amplifier.

EMI filter 906 includes inductors (or ferrite beads) 908 and 910. Sinceclass-E amplifiers generate less EMI radiation than a comparable class-Damplifier, it is possible to implement EMI filter 906 without a parallelcapacitance.

In some embodiments, power transmitter circuit 900 is implementedwithout EMI filter 906.

Foreign object detection circuit 909 estimates the power transmitted bymeasuring the instantaneous current flowing through transmitting antenna108 during step 918 using ADC 916; measuring the instantaneous voltageacross transmitting antenna 108 during step 914 using ADC 912; andcomputing the instantaneous power transmitted by the antenna 108 in step920 based on the measured instantaneous current and voltage. Theinstantaneous power computed in step 920 is integrated over time todetermine an average transferred power during step 922. Since theinstantaneous current and the instantaneous voltage is measured directlyat the transmitting antenna, it is possible to accurately determine theinstantaneous transmitted power and the average transmitted powerwithout estimating losses in amplifier 902 and EMI filter 906.

In some embodiments, the instantaneous current, the instantaneousvoltage, and the instantaneous power is measured during each AC cycleperiod of the AC current flowing through transmitting antenna 108.

Steps 914, 918, 920 and 922 may be implemented, for example, by acontroller, such as controller 506. In some embodiments, otherimplementations such as using analog circuits or mixed signal circuitsmay be used.

ADCs 912 and 916 may be implemented in any way known in the art. Forexample, in some embodiments, ADCs 912 and 916 may be implemented as SARADCs, sigma-delta ADCs. In some embodiments, a single ADC is shared tomeasuring the voltage across resonant capacitor 904 and acrosstransmitting antenna 108 by, e.g., using an analog multiplexer.

Additional circuits (not shown) may be used to implement the voltage andcurrent measurements. For example, some embodiments may include adifferential amplifier coupled between resonant capacitor 904 and ADC916. Similarly, a differential amplifier may be coupled betweentransmitting antenna 108 and AC 912.

Advantages of some embodiments include the accurate estimation oftransferred power without having to measure input DC power and withouthaving to rely and on estimates for the losses of various blocks, suchas the losses in the amplifier stage and EMI filter. In addition toavoiding the associated computational complexity, by measuring theinstantaneous current flowing through the transmitting antenna and thevoltage across the transmitting antenna, higher accuracy of thetransmitted power is achieved. For example, estimation errors for thenon-linear losses in the amplifier, including losses in the bridge ofthe amplifier, and EMI filters are avoided.

Some embodiments combine the circuits and methods described in FIGS. 8and 9 with the embodiments described in FIGS. 1-7. For example,correlation between the presence of metal objects in the electromagneticfields detected by sensing array no and foreign object detection circuit909 may be used to increase the confidence that a metallic object ispresent.

As shown in FIG. 9, amplifier 902 is differential. In some embodiments,amplifier 902 may be implemented in a single-ended manner.

Amplifier 902, also referred to as diver 902, may be implemented, forexample, as a class-E amplifier or as a class-D amplifier. Other typesof amplifiers, such as class-AB amplifiers, may be used.

Amplifier 902 may be implemented in various ways. For example, FIG. 10shows a schematic diagram of class-E amplifier 1000, which is a possibleimplementation of amplifier 902, according to an embodiment of thepresent invention. FIG. 11 shows waveforms of class-E amplifier 1000,according to embodiments of the present invention. Class-E amplifier 100includes controller 1002, transistors 1004 and 1008, inductors 1006 and1010, tuning bank 1016, shunt capacitor 1018 and zero-crossing detectioncircuit 1020.

During normal operation, controller 1002 switches transistors 1004 and1008 at a low frequency (e.g., between 80 kHz and 400 kHz) to generatean AC current flowing through transmitting antenna 108. For example, asshown in FIG. 11, transistor 1004 is turned on when voltage V₁₀₀₄ isnear 0 V and is turned off when transistor 1008 is turned on. Similarly,transistor 1008 is turned on when voltage V₁₀₀₈ is near 0V and is turnedoff when transistor 1004 is turned on.

Voltage waveforms V₁₀₀₄ and V₁₀₀₈ at nodes N₁₀₀₄ and N₁₀₀₈,respectively, approximate half of a sine wave, as shown in FIG. 11.Voltage waveforms V₁₀₀₄ and V₁₀₀₈ has lower harmonic content than thesquare waves generated by class-D amplifiers, such as class-D amplifier802. Since the harmonic content of the coil driving signal is much lowerfor class-E drivers compared to class-D drivers, the losses in thetransmitter transmitting antenna and in any filtering components arelower and more predictable across the full spectrum of loads andcoupling factors between the power transmitter and the receiving antennaof the power receiver.

In some embodiments, the switching frequency corresponds to the resonantfrequency of class-E amplifier moo, which is affected by the inductanceof inductors 1006 and low, capacitors 1012 and 1014, the load coupled toclass-E amplifier 1000 (e.g., EMI filter 906, antenna 108 and resonantcapacitor 904), and other factors such as the magnitude of currentflowing through the load, the temperature of the components, etc.

Turning on transistors 1004 and 1008 using ZVS or QZVS may result inimproved efficiency. ZVS or QZVS occurs when the body diode oftransistors 1004 and 1008 starts conducting. When the body diode oftransistors 1004 (or transistor 1008) starts conducting, voltage V₁₀₀₄(or voltage V₁₀₀₈) drops below 0 V (not shown in FIG. 11). Zero-crossingdetector ZCD circuit 1020 is used to the zero-crossing (from above 0V tobelow 0V).

As shown in FIG. 11, voltages V₁₀₀₄ and V₁₀₀₈ are 180° out of phase.Controller 1002 turns on transistor 1008 when ZCD circuit 1020 detects azero crossing. Controller 1002 turns on transistor 1004 based on theknown period of V₁₀₀₄ and V₁₀₀₈.

In some embodiments, an adaptive mechanism may be used to turn ontransistors 1004 and 1008. For example, in some embodiments, a secondZVD circuit (not shown) coupled to node N₁₀₀₈ is used to determine whento turn on transistor 1004.

ZCD circuit 1020 may be implemented in any way known in the art. Forexample, some embodiments, may implement ZCD circuit 1020 with acomparator in series with a one shot circuit. Other analogimplementations are also possible.

In some embodiments, controller 1020 may implement zero-crossingdetection digitally by sampling voltage V₁₀₀₄ and/or voltage V₁₀₀₈ usingan ADC, for example. The ADC may sample voltages V₁₀₀₄ and/or V₁₀₀₈ at ahigh sampling rate and/or sampling voltages V₁₀₀₄ and/or V₁₀₀₈ usingdifferent phase delays across multiple periods of voltages V₁₀₀₄ and/orV₁₀₀₈.

As shown, ZCD circuit 1020 uses 0 V as the zero-crossing threshold (or avalue near 0 V, such as −0.35 V).

In some embodiments, controller 1020 may be implemented as a part ofcontroller 506. In other embodiments, controller 1020 may be implementedindependently from controller 506.

The switching duty cycle of class-E amplifier 1000 (e.g., the ratiobetween time T_(1004_on) over period T₁₀₀₄) is determined by the class-Eamplifier 1000 elements (e.g., inductances, capacitances, etc., of powertransmitter 102) and the load (e.g., transmitting antenna 108), which isaffected by power receiver 104.

In some embodiments, the switching duty cycle is substantially equal to50%. Operating class-E amplifier 1000 with a 50% duty cycle may resultin higher efficiency and higher power transfer.

In some embodiments, class-E amplifier 1000 operates at a fixedfrequency (e.g., a frequency between 100 kHz and 150 kHz) based, forexample, in clock CLK. In such embodiments, better efficiency may beachieved by operating class-E amplifier 1000 in ZVS or QZVS. Forexample, FIG. 12 shows waveforms of class-E amplifier 1000 operating ata fixed frequency, according to an embodiment of the present invention.As shown in FIG. 12, voltages V₁₀₀₄ and V₁₀₀₈ are 180° out of phase.Controller 1002 turns on transistor 1008 when ZCD circuit 1020 detects azero crossing. Controller 1002 turns on transistor 1004 based on a fixedfrequency (i.e., 1/T₁₀₀₄ equals a fixed frequency), such as, forexample, at a rising edge and/or falling edge of clock CLK. To achievebetter efficiency, both transistors T₁₀₀₄ and T₁₀₀₈ turn on during deadtimes T_(dead1) and T_(dead2).

The resonant frequency of class-E amplifier 1000 may affect the powertransfer and efficiency of power transmitter 102 when operating at afixed frequency. For example, when the resonant frequency of class-Eamplifier 1000 is higher than the fixed frequency, dead times T_(dead1)and T_(dead2) may be large, thereby decreasing the amount of power thatcan be transferred. When the resonant frequency of class-E amplifier1000 is lower than the fixed frequency, ZVS or QZVS switching may not bepossible (as the fixed frequency forces transistor 1004 to be turned onbefore reaching 0V). When the resonant frequency of class-E amplifier1000 is equal than the fixed frequency, dead times T_(dead1) andT_(dead2) are zero.

Controller 1002 may use tuning bank 1016 to adjust the resonancefrequency of class-E amplifier 1000 to keep dead times T_(dead1) andT_(dead2) within a target operating range (e.g., in some embodiments,dead times T_(dead1) and T_(dead2) are between 50 ns and 250 ns). Forexample, if dead times T_(dead1) and T_(dead2) are higher than expected(i.e., higher resonant frequency), controller 1002 may connectcapacitors between node N₁₀₀₄ and ground and between node N₁₀₀₈ andground by turning on one or more transistors of tuning bank 1016 untildead times T_(dead1) and T_(dead2) are within the expected range.Similarly, controller 1002 may disconnect capacitors between node N₁₀₀₄and ground and between node N₁₀₀₈ and ground by turning off one or moretransistors of tuning bank 1016 until dead times T_(dead1) and T_(dead2)are within the expected range.

Dynamic tuning using tuning bank 1016 may also help achieve a switchingduty cycle substantially equal to 50%. The capacitance at nodes N₁₀₀₄and N₁₀₀₈ is increased if the duty cycle is too low. The capacitance isdecreased at nodes N₁₀₀₄ and N₁₀₀₈ if the duty cycle is too high.

In some embodiments, controller 1002 connects and/or disconnectscapacitors of tuning bank 1016 during dead times T_(dead1) and/orT_(dead2).

Tuning bank 1016 has n capacitors connected between node N₁₀₀₄ andground via respective transistors, and n capacitors connected betweennode N₁₀₀₈ and ground via respective transistors. In some embodiments, nmay be a number between 1 and 16. A different number may be used.

In some embodiments, the capacitors of tuning bank 1016 may be equalcapacitance. In other embodiments, different capacitances may be used(e.g., capacitors 1024 and 1032 having capacitance C, and capacitors1028 and 1036 having capacitance 2^(n)*C). By using differentcapacitance for the capacitors of tuning bank 1016, a wider range offixed frequencies may be supported by class-E amplifier 1000.

In some embodiments, controller 1002 may connect or disconnectcapacitors of tuning bank using shared control signals (e.g.,S_(tune_n)). In other embodiments, each of the transistors of tuningbank 1016 is controlled independently.

In some embodiments, tuning bank 1016 is used to vary the resonancefrequency of class-E amplifier when operating at resonance, such asshown in FIG. 11.

Transistors 1004 and 1008 are n-type metal oxide field effecttransistors (MOSFETs). P-type transistors may also be used. In someembodiments, transistors 1004 and 1008 may be implemented using othertypes of transistors, such as MOSFETs, gallium nitride (GaN)transistors, and insulated gate bipolar transistors (IGBTs). Otherimplementations may also be used.

Transistors 1024, 1028, 1032, and 1036 (and other transistors couplingthe plurality of capacitors of tuning bank 1016 to ground) are n-typeMOSFETs. Other types of transistors or other circuits that may functionas switches may be used.

Inductors 1006 and 1010 may be implemented, for example as an air coreinductor or a ferrite core inductor. Other types of inductors may alsobe used.

As shown in FIGS. 11 and 12, antenna 108 is exposed to two waveforms(V₁₀₀₄ and V₁₀₀₈) that are each approximately equal to a half-sinewavewaveform. Even though for purposes of wireless power transmission,transmitting antenna 108 transmits a signal based on the difference ofV₁₀₀₄-V₁₀₀₈ (see FIGS. 11 and 12), for EMI purposes, signals V₁₀₀₄ andV₁₀₀₈ look like a half-sinewave superimposed with a square wave.

Some embodiments improve EMI performance by exposing transmittingantenna 108 to a signal that is approximately equal to a sinewave forEMI purposes by using a transformer. For example, FIG. 13 shows aschematic diagram of class-E amplifier 1300, according to an embodimentof the present invention. Class-E amplifier 1300 operates in a similarmanner than class-E amplifier 1000. Class-E amplifier 1300, however,uses transformer 1302 between switching transistors 1004 and 1008, andtransmitting antenna 108 to achieve better EMI.

Transformer 1302 receives signals V₁₀₀₄ and V₁₀₀₈ across primary winding1304, e.g., as shown in FIGS. 11 and 12. Transformer 1302 producesacross secondary windings 1306 a signal V₁₀₀₄-V₁₀₀₈ (e.g., as shown inFIGS. 11 and 12), which is delivered to transmitting antenna 108.

Advantages of some embodiments include better EMI performance byexposing transmitting antenna 108 to a signal that is approximatelyequal to a sinewave.

In some embodiments, transformer 1302 is implemented having goodcoupling factor (e.g., 0.99 or better), where possible coupling factorsrange between 0 and 1.

Other embodiments may implement transformer with coupling less than0.99, such as 0.8 or lower, such as 0.5. By having less than a goodcoupling factor (e.g., between 0.5 and 0.8), changes in the impedance oftransmitting antenna 108 (e.g., due to power receiver 104 moving) aredecoupled from nodes N₁₀₀₄ and N₁₀₀₈. Therefore, changes in theimpedance of transmitting antenna 108 do not affect, or affect less theresonant frequency of class-E amplifier 1300.

In some embodiments, class-E amplifier 1300 may be implemented withouttuning bank 1016 and/or without EMI filter 906.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. It is therefore intended that the appended claims encompassany such modifications or embodiments.

1. A method for operating a class-E amplifier for driving a wirelesspower transmitting antenna, the method comprising: turning on a firstswitching transistor when a second switching transistor is turned on,the first switching transistor coupled between a first intermediate nodeand a reference terminal, the first intermediate node coupled to thetransmitting antenna, the transmitting antenna coupled in series with aresonant capacitor; turning off the second switching transistor a firsttime after turning on the first switching transistor; turning on thesecond switching transistor after turning off the second switchingtransistor; turning off the first switching transistor a second timeafter turning on the second switching transistor; determining the firsttime and the second time based on an output of a zero-crossing detectorcircuit that is coupled to the first intermediate node; when the firsttime and the second time are higher than a first threshold, increasing acapacitance connected to the first intermediate node using a capacitortuning bank; and when the first time and the second time are lower thana second threshold, decreasing the capacitance connected to the firstintermediate node using the capacitor tuning bank, wherein the firstthreshold is higher than the second threshold.
 2. The method of claim 1,wherein the first intermediate node is coupled to the transmittingantenna via a transformer.
 3. The method of claim 1, wherein thecapacitor tuning bank comprises a plurality of capacitors coupled to thefirst intermediate node, each capacitor of the plurality of capacitorscoupled in series with a respective transistor, wherein a firstcapacitor of the plurality of capacitors has a first capacitance, andwherein a second capacitor of the plurality of capacitors has a secondcapacitance that is different from the first capacitance.
 4. The methodof claim 3, wherein the second capacitance is twice the firstcapacitance.
 5. The method of claim 1, wherein a switching frequency ofthe first switching transistor is fixed.
 6. The method of claim 5,wherein the switching frequency is between 100 kHz and 150 kHz.
 7. Themethod of claim 1, wherein the second switching transistor is coupledbetween a second intermediate node and the reference terminal, the firstand second intermediate nodes coupled to first and second terminals of aprimary winding of a transformer, the transformer having a secondarywinding coupled to the transmitting antenna and the resonant capacitor.8. The method of claim 7, wherein the transformer has a coupling factorbetween 0.5 and 0.8.
 9. A method for operating a class-E amplifier fordriving a wireless power transmitting antenna, the method comprising:turning on and off a first switching transistor, wherein the firstswitching transistor is coupled between a first intermediate node and areference terminal, the first intermediate node coupled to a firstterminal of a resonant tank comprising the transmitting antenna coupledin series with a resonant capacitor; turning on and off a secondswitching transistor, wherein the second switching transistor is coupledbetween a second intermediate node and the reference terminal, thesecond intermediate node coupled to a second terminal of the resonanttank; determining an overlap of on-time between the first and secondswitching transistors; when the overlap of on-time between the first andsecond switching transistors is higher than a first threshold,increasing a capacitance connected to the first intermediate node usinga capacitor tuning bank; and when the overlap of on-time between thefirst and second switching transistors is lower than a second threshold,decreasing the capacitance connected to the first intermediate nodeusing the capacitor tuning bank, wherein the first threshold is higherthan the second threshold.
 10. The method of claim 9, wherein turning onand off the first switching transistor comprises turning on and off thefirst switching transistor at a fixed frequency that is between 80 kHzand 400 kHz, and wherein the overlap of on-time between the first andsecond switching transistors is between 50 ns and 250 ns.
 11. A methodfor operating a class-E amplifier for driving a wireless powertransmitting antenna, the method comprising: turning on and off a firstswitching transistor at a fixed frequency, wherein the first switchingtransistor is coupled between a first intermediate node and a referenceterminal, the first intermediate node coupled to a first terminal of aresonant tank comprising the transmitting antenna coupled in series witha resonant capacitor; turning on and off a second switching transistorat the fixed frequency, wherein the second switching transistor iscoupled between a second intermediate node and the reference terminal,the second intermediate node coupled to a second terminal of theresonant tank; determining an overlap of on-time between the first andsecond switching transistors; and adjusting a resonant frequency of theclass-E amplifier using a capacitor tuning bank coupled to the first andsecond intermediate nodes based on the overlap of on-time between thefirst and second switching transistors.
 12. The method of claim 11,wherein adjusting the resonant frequency of the class-E amplifiercomprises: when the overlap of on-time between the first and secondswitching transistors is higher than a first threshold, connecting afirst capacitor between the first intermediate node and the referenceterminal using the capacitor tuning bank; and when the overlap ofon-time between the first and second switching transistors is lower thana second threshold, disconnecting the first capacitor from the firstintermediate node or the reference terminal using the capacitor tuningbank.
 13. The method of claim 12, wherein connecting the first capacitorbetween the first intermediate node and the reference terminal comprisesturning on a first transistor that is coupled in series with the firstcapacitor, and wherein disconnecting the first capacitor from the firstintermediate node or the reference terminal comprises turning off thefirst transistor.
 14. The method of claim 12, wherein connecting ordisconnecting the first capacitor comprises connecting or disconnectingthe first capacitor during the overlap of on-time between the first andsecond switching transistors.
 15. The method of claim 11, wherein thecapacitor tuning bank comprises a first capacitor tuning sub-bankcomprising n capacitors coupled between the first intermediate node andthe reference terminal and a second a second capacitor tuning sub-bankcomprising n capacitors coupled between the second intermediate node andthe reference terminal, wherein n is a positive integer higher than orequal to 1 and lower than or equal to
 16. 16. The method of claim 15,wherein each of the n capacitors of the first capacitor tuning sub-bankcomprises a different capacitance.
 17. The method of claim 15, furthercomprising using a same signal for connecting and disconnecting a firstcapacitor of the first capacitor tuning sub-bank and a first capacitorof the second capacitor tuning sub-bank.
 18. The method of claim 11,wherein the first and the second switching transistors are n-typetransistors.
 19. The method of claim 11, wherein the first and thesecond switching transistors are metal oxide field effect transistors(MOSFETs), gallium nitride (GaN) transistors, or insulated gate bipolartransistors (IGBTs).
 20. The method of claim 11, wherein a firstinductor is coupled between a first supply terminal and the firstswitching transistor, wherein a second inductor is coupled between thefirst supply terminal and the second switching transistor, and whereinthe first and second inductors are air core inductors or ferrite coreinductors.